...element to provide an electrical path. There are many different types of Fibre Channel connectors. D-Subminiature (D-sub) connectors have a mating face that is shaped like the letter "D". This shape provides polarization since D-shaped... Search by Specification | Learn More about Fibre Channel Connectors

USB), Centronics, D-subminiature, or header connectors. Small computer system interface (SCSI) connectors are parallel devices that connect peripherals to computers. IEEE 1284 connectors also use a parallel port protocol. Specialty electrical... Search by Specification | Learn More about Electrical Connectors

Fibre Channel products include hubs, directors, servers, adapters, etc. Learn More about Fibre Channel Products

Diacs are bi-directional diodes that switch AC voltages and trigger silicon controlled rectifiers (SCRs) and triacs. Except for a small leakage current, diacs do not conduct until the breakover voltage is reached. Search by Specification | Learn More about Diacs

Power MOSFETs are majority carrier devices which have high input impedance and do not exhibit minority carrier storage effects, thermal runaway, or secondary breakdown. Power MOSFETs have higher breakdown voltages than bipolar junction transistors (BJTs) and can be used in higher frequency applications where switching power losses are important. Search by Specification | Learn More about Power MOSFET

Varactor diodes are p-n junction diodes that are designed to act as a voltage controlled capacitance when operated under reverse bias. Search by Specification | Learn More about Varactor Diodes

Gunn diodes or transfer electron devices (TED) exhibit a negative resistance region. They are used in high-frequency applications, often for building RF oscillators. Impact ionization avalanche transit-time (IMPATT) diodes are designed to operate at very high frequency and power. They are used as elements in RF and microwave devices. Search by Specification | Learn More about GUNN and IMPATT Diodes

PIN diodes are three-layer semiconductor diodes consisting of an intrinsic layer separating heavily doped P and N layers. The charge stored in the intrinsic layer in conjunction with other diode parameters determines the resistance of the diode at RF and microwave frequencies. Search by Specification | Learn More about PIN Diodes

Zener diodes are PN junction devices that are designed to operate in the reverse-breakdown region. Search by Specification | Learn More about Zener Diodes

Junction field-effect transistors (JFET) consist of a semiconductor channel in which the width and the conductivity of the channel is controlled by the space-charge region associated with the p-n region. Search by Specification | Learn More about Junction Field-Effect Transistors (JFET)

RF MOSFET transistors are metal-oxide semiconductor field-effect transistors (MOSFETs) that are designed to handle high-power RF signals from devices such as stereo amplifiers, radio transmitters, TV monitors, etc. Search by Specification | Learn More about RF MOSFET Transistors

Unijunction transistors (UJT) are three-terminal devices that exhibit a negative resistance characteristic. Search by Specification | Learn More about Unijunction Transistors (UJT)

Programmable uni-junction transistors (PUT) are three-terminal thyristors that are triggered into conduction when the voltage at the anode exceeds the voltage at the gate. The PUT is similar to the UJT, but its intrinsic standoff ratio can be set by two external resistors. Hence, the term "programmable" is used. Search by Specification | Learn More about Programmable Unijunction Transistors (PUT)

...in A/D converters, and are also used in level detection, on-off controls, clock-recovery circuits, window detectors, and Schmitt triggers. The output stage of analog comparators is wired to be more flexible than that of op-amps. Analog comparators often... Search by Specification | Learn More about Analog Comparators